Recent results in the development of an integrated EUVL laboratory tool

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Abstract
The demand for smaller critical dimensions in advanced computer chips has driven projection lithography to shorter wavelengths. Deep ultraviolet systems, operating at 248 nm, are commercially available and 193 nm lithography is under development. This paper describes a research and development program to extend this trend to extreme ultraviolet (EUV) wavelengths, in the range of 11 nm to 14 nm. Research and development activities are concentrated in four major areas: (1) aspheric reflectors required in an advanced EUV camera, (2) surface- imaging resists having the required resolution and sensitivity, (3) defect-free reflecting substrates required for mask fabrication, and (4) a compact source of EUV radiation. Each of these issues is discussed and efforts to address them are described. An intermediate EUVL laboratory tool, currently under construction, will also be described. This system uses a 10x reduction Schwarzschild camera and a magnetically levitated wafer stage driven by a digital feedback controller. This system represents the first attempt at integrating all major subsystems into an EUVL laboratory tool, suitable for use in device fabrication experiments.

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