The Effects of Ion-Implanted Ga, As, and P on the Subsequent Diffusion of Ion-Implanted Zn in GaAs0.6P0.4
- 1 January 1975
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- ChemInform Abstract: A NONAQUEOUS ELECTROLYTE FOR ANODIZING GAAS AND GAAS0,6P0,4Chemischer Informationsdienst, 1974
- Diffusion Mechanism of Zn in GaAs and GaP Based on Isoconcentration Diffusion ExperimentsJournal of Applied Physics, 1964