A new aspect on mechanical stress effects in scaled MOS devices
- 1 January 1990
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Development of SIMUS 2D/F: A stress analysis program for thin multilayer structure.TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series A, 1989
- Hot-electron effects on short-channel MOSFETs determined by the piezoresistance effectIEEE Transactions on Electron Devices, 1988
- Piezoresistance in Quantized Conduction Bands in Silicon Inversion LayersJournal of Applied Physics, 1971
- Mobility Anisotropy and Piezoresistance in Silicon p-Type Inversion LayersJournal of Applied Physics, 1968