High-temperature properties of InGaN light-emitting diodes

• 30 November 1998
• journal article
• Published by IOP Publishing in Quantum Electronics
• Vol. 28  (11) , 987-990
• https://doi.org/10.1070/qe1998v028n11abeh001370

Abstract

Keywords

• LIGHT EMITTING DIODES
• INGAN LIGHT
• HIGH TEMPERATURE PROPERTIES