The noise measure of GaAs and InP transferred electron amplifiers

1 September 1976

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 23 (9) , 1086-1094
https://doi.org/10.1109/T-ED.1976.18540

Abstract

The noise measures of both GaAs and InP transferred electron amplifiers (TEA's) are calculated by a small-signal computer simulation for devices having a range of realistic doping profiles, some of which are designed specifically to limit the amount of free charge injected into the structure. Optimum values of average electric-field strength and carrier concentration times length product for minimum noise are shown to exist. The computed results differ not too greatly from those predicted by a simple analytical model where a uniform free carrier concentration and dc electric field are assumed. The lowest noise measures predicted are 7 dB for GaAs and 4 dB for InP if charge injection is suitably constrained. The computed results are compared with results reported in the literature.

Keywords

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