Physical interpretation of the noise reduction for the generation—Recombination current due to SRH centers in the space-charge layer

1 August 1977

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 24 (8) , 1127-1129
https://doi.org/10.1109/t-ed.1977.18891

Abstract

The expressions for the noise in the generation-recombination current due to SRH centers in the space-charge layer of junction devices have been recast in a simple form. For low forward bias the noise reduction (Γ²≈ 0.75) is shown to stem from the two-step recombination process, while the high-frequency reduction Γ²≳ 0.5 stems from the noncorrelation of electron and hole transport.

Keywords

MATHEMATICS
SPACE CHARGE
HIGH FREQUENCY
LOW FREQUENCY NOISE
SPONTANEOUS EMISSION
STEADY STATE
CHARGE CARRIER DENSITY
FREQUENCY
NOISE REDUCTION

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