Minority-Carrier Trapping and the Luminescence Time Response of Semiconductors

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Abstract
Time-dependent solutions are presented for a two-center model of the interaction between trapping centers and defect-related luminescence in a semiconductor. It is found that the luminescence time response of deep-lying recombination sites can be used analogously to the photoconductive decay in characterizing the properties of dominant trapping centers. It is also shown under what conditions the presence of traps can interfere with the use of luminescence-time-response measurements in determining the properties of radiative recombination centers.