Metal induced crystallization of amorphous silicon

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Abstract
The reactions between a thin metal film of Al or Ag and a layer of amorphous Si have been investigated using transmission electron microscopy and Auger electron spectroscopy. The samples were analyzed after deposition and after different heat treatments. Al and Ag were found to reduce the crystallization temperature of amorphous Si. A crystallization temperature of 325 °C was observed for the Al–Si structure and of 525 °C for the Ag–Si structure. A new phase between Al and Si, which has not previously been reported, has been detected at a temperature of 150 °C. Some evidence for a formation of a metastable phase between Ag and Si during the crystallization process has also been found.

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