Actinometric study on SiO2etching by a dual-frequency magnetic triode reactor
- 1 August 1992
- journal article
- Published by IOP Publishing in Plasma Sources Science and Technology
- Vol. 1 (3) , 151-155
- https://doi.org/10.1088/0963-0252/1/3/002
Abstract
The aim of this study is to characterize the SiO2 etching process developed in a magnetic triode experimental system fed by C2F6. The effect of some experimental parameter variation, namely of pressure, C2F6 flow, magnetic field intensity, upper electrode power (40 MHz), lower electrode power (13.56 MHz) on the SiO2 etch rate has been studied and related to the absolute value of the self-induced voltage of the lower substrate electrode. The gas phase has been investigated by means of actinometric optical emission spectroscopy. Good correlation has been found between the gas density trends of CF2 radicals and F atoms and the behaviour of etch rate, showing a significant dependence of the SiO2 etching rate on both ion energy and F:CF2 density ratio.Keywords
This publication has 5 references indexed in Scilit:
- Mechanisms of deposition and etching of thin films of plasma-polymerized fluorinated monomers in radio frequency discharges fed with C2F6-H2 and C2F6-O2 mixturesJournal of Applied Physics, 1987
- Mechanism of Dry Etching of Silicon Dioxide: A Case of Direct Reactive Ion EtchingJournal of the Electrochemical Society, 1985
- Optical emission spectroscopy and actinometry in CCl4-Cl2 radiofrequency dischargesPlasma Chemistry and Plasma Processing, 1984
- Spectroscopic diagnostics of CF4-O2 plasmas during Si and SiO2 etching processesJournal of Applied Physics, 1981
- Reaction of fluorine atoms with SiO2Journal of Applied Physics, 1979