Growth and physical properties of RuS2single crystals

Abstract
RuS2 single crystals have been grown by chemical transport reaction using ICI3 as transport agent. As confirmed by X-ray investigations, the specimens crystallise with the correct pyrite structure. The electrical resistivity and Hall effect studies showed n-type semiconducting behaviour. At room temperature, the electrical resistivity was 6.2*10-2 Omega cm, the carrier concentration was 3.2*1017 cm-3 and the Hall mobility was 310 cm2 V-1 s-1. The optical gap was determined at about 1.3 eV.

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