Investigation of Leakage Currents in a Zinc Borosilicate Glass Passivated p‐n Junction Using a Gate‐Controlled Diode

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Abstract
A new type of gate‐controlled diode to investigate the leakage currents of a thick zinc‐borosilicate glass passivated p+‐n junction is described. Using this diode, temperature dependencies of surface and bulk components of the leakage current were measured at different values of the reverse voltage. It was revealed that the surface generation current component cannot be ignored, as compared with bulk current component, even at temperatures above 100°C. The surface recombination velocity at room temperature in glass/silicon system calculated from surface generation current component exhibited a larger value of 300–400 cm/s than did the system, and it tended to decrease with decreases in reverse voltage or with increases in junction temperature.

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