Electrical and optical properties of magnesium-diffused silicon
- 1 October 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (10) , 6989-6995
- https://doi.org/10.1063/1.330045
Abstract
The electrical and optical properties of Mg-diffused Si, both as-diffused and post-diffuse heat treated, have been investigated through measurements of dark conductivity and Hall effect, optical absorption, and photoconductivity. Complicated properties are observed which can be described consistently by a five-level model, a major level at 0.107 eV associated with an interstitial neutral magnesium donor plus four shallower donor levels at 0.04, 0.055, 0.08, and 0.093 eV below the conduction band.This publication has 11 references indexed in Scilit:
- Electrical and optical properties of tellurium-doped siliconApplied Physics Letters, 1981
- Deep sulfur-related centers in siliconJournal of Applied Physics, 1980
- Electronic properties of selenium-doped siliconJournal of Applied Physics, 1980
- Extrinsic silicon detectors for 3–5 and 8–14 μmInfrared Physics, 1976
- Study of Beryllium and Beryllium-Lithium Complexes in Single-Crystal SiliconPhysical Review B, 1972
- Excitation Spectra and Piezospectroscopic Effects of Magnesium Donors in SiliconPhysical Review B, 1972
- Higher Donor Excited States for Prolate-Spheroid Conduction Bands: A Reevaluation of Silicon and GermaniumPhysical Review B, 1969
- Beryllium as an acceptor in siliconSolid State Communications, 1968
- Magnesium as a donor impurity in siliconSolid State Communications, 1967
- Double-Acceptor Behavior of Zinc in SiliconPhysical Review B, 1957