Exciton Dynamics in Homoepitaxial GaN

• 1 February 1998
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 264-268, 1275-1278
• https://doi.org/10.4028/www.scientific.net/msf.264-268.1275

Abstract

Keywords

• BOUND EXCITON
• CAPTURE
• DEFECT
• FREE EXCITONS
• HOMOEPITAXY
• RADIATIVE LIFETIME
• TRANSFER