Atomic and Electronic Structures of Reconstructed Si(100) Surfaces
- 2 July 1979
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 43 (1) , 43-47
- https://doi.org/10.1103/physrevlett.43.43
Abstract
New structural models for 2×1 and 4×2 reconstructed (100) surfaces of Si determined from energy-minimization claculations are presented. The optimal 2×1 and 4×2 structures are found to correspond to asymmetric dimer geometries with partially ionic bonds between surface atoms, resulting in semiconducting surface electronic bands. The atomic and electronic structures for the 2×1 and 4×2 reconstructed surfaces are discussed.Keywords
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