Very high-speed metal–semiconductor–metal InGaAs:Fe photodetectors with InP:Fe barrier enhancement layer grown by low pressure metalorganic chemical vapour deposition

6 December 1990

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 26 (25) , 2107-2109
https://doi.org/10.1049/el:19901356

Abstract

The fabrication of long-wavelength metal–semiconductor–metal photodetectors using an InGaAs:Fe photoactive layer and an InP:Fe barrier enhancement layer is reported. An internal quantum efficiency of 100% and a dark current of 250 nA at 5 V bias is achieved. High-speed performance is studied as a function of contact spacing, showing an impulse response of less than 18 ps. Microwave s₁₁-parameter measurements are used to determine the values of the parasitic elements due to device structure and packaging. The resulting −3 dB cutoff frequency of up to 75 GHz demonstrates that almost transit time limited high-speed operation is obtained.

Keywords

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