Effects of annealing in O2 and N2 on the electrical properties of tantalum oxide thin films prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition
- 1 October 1995
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 24 (10) , 1435-1441
- https://doi.org/10.1007/bf02655461
Abstract
No abstract availableKeywords
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