Recombination Centers on Ion-Bombarded and Vacuum Heat-Treated Germanium Surfaces

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Abstract
Germanium surfaces were bombarded with argon ions and then heat-treated under high vacuum. Room-temperature values of surface recombination velocity, surface conductivity, dark field effect, and field effect under illumination were measured after successive heat treatments. In addition, the temperature dependence of these quantities was determined. It was confirmed that after annealing of the bombardment damage, a large number of acceptor type surface states approximately clamped the surface potential. Two types of recombination centers were identified: type 1, located near the middle of the gap and type 2, located near the valence band. The various heat treatments produced changes in the density of the type 1 centers but did not appear to effect the density of the type 2 centers.