Electric-field-induced absorption changes in triangular quantum wells grown by pulsed-beam molecular-beam-epitaxy technique

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Abstract
We present an observation of electric‐field‐induced excitonic quenching in GaAs/AlGaAs triangular quantum wells, grown by pulsed‐beam molecular‐beam‐epitaxy technique. We have measured photocurrent spectra for both symmetric and asymmetric triangular quantum wells as a function of electric field. In both cases, at the ground‐state exciton energy, we observed significant electroabsorption changes that were associated with the vanishing of sharp exciton resonances when the triangular quantum‐well structures were electrically switched to systems with no quantum confinement for one or both types of carriers.