Properties of silicon nitride and silicon oxynitride films prepared by reactive sputtering
- 16 December 1974
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 26 (2) , 579-584
- https://doi.org/10.1002/pssa.2210260222
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Absorption edge and internal electric fields in amorphous semiconductorsPublished by Elsevier ,2003
- Optical Properties of Silicon NitrideJournal of the Electrochemical Society, 1973
- Weak Absorption Tails in Amorphous SemiconductorsPhysical Review B, 1972
- Conduction in non-crystalline systems V. Conductivity, optical absorption and photoconductivity in amorphous semiconductorsPhilosophical Magazine, 1970
- Simple Band Model for Amorphous Semiconducting AlloysPhysical Review Letters, 1969
- Charge Phenomena in dc Reactively Sputtered SiO2 FilmsJournal of Applied Physics, 1968