Annealing of Hall-Mobility Changes in Electron-Irradiated Germanium
- 1 November 1967
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (12) , 4745-4748
- https://doi.org/10.1063/1.1709212
Abstract
Annealing of Hall-mobility changes in n-type germanium irradiated with 1 MeV electrons at 85°K was investigated using an isochronal technique. Two annealing stages which have been reported earlier were confirmed and separated. One stage at above 100°K is connected with ``contact'' annealing, and a second one close to 140°K is caused by bulk annealing. The latter stage corresponds to the stage found already by J. C. Pigg for gamma irradiation.This publication has 3 references indexed in Scilit:
- Annealing of-Gamma-Irradiated GermaniumPhysical Review B, 1966
- New Double-Frequency Method for Hall Coefficient MeasurementsReview of Scientific Instruments, 1965
- Electrical Properties of-Type GermaniumPhysical Review B, 1954