RF components implemented in an analog SiGe bipolar technology

23 December 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 138-141
https://doi.org/10.1109/bipol.1996.554628

Abstract

Several components for the design of RF transceivers on silicon substrates, developed in a manufacturable analog SiGe bipolar technology without any significant process alterations, are described. Spiral inductors in the range /spl sim/0.15-80 nH with typical maximum Q's of 3-20, MOS and MIM capacitors (1-2 pF) with Q's up to 80, and varactors with 40% tuning range and Q's of 20-50 are presented.

Keywords

RADIO FREQUENCY
SILICON GERMANIUM
GERMANIUM SILICON ALLOYS
INDUCTORS
INDUCTANCE
DOPING
SPIRALS
CAPACITANCE
Q FACTOR
COILS

This publication has 1 reference indexed in Scilit:

Microwave inductors and capacitors in standard multilevel interconnect silicon technology
IEEE Transactions on Microwave Theory and Techniques, 1996