Experimental determination of electroabsorption in GaAs/Al 0.32 Ga 0.68 As multiple quantum well structures as function of well width

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Abstract
Electroabsorption in GaAs/Al0.32Ga0.68As multiple quantum well structures was experimentally studied for quantum well widths in the range 50–260 Å. The maximum obtainable change in absorption coefficient was found to increase monotonically with decreasing well width at the cost of increasing electric field.