GaN epilayers grown on 100 mm diameter Si(111) substrates
- 1 April 2000
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 44 (4) , 685-690
- https://doi.org/10.1016/s0038-1101(99)00302-0
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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