A new technique for measuring lateral distribution of oxide charge and interface traps near MOSFET junctions

1 July 1991

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 12 (7) , 393-395
https://doi.org/10.1109/55.103618

Abstract

A technique to measure the lateral distribution of both interface traps and trapped oxide charge near the source-drain junctions in MOSFETs is presented. Its basic principle is described. This technique derives from the charge-pumping method, is easy to implement, and allows ready separation of the interface-trap and oxide charge components. Examples are shown for hot-carrier stressed MOS transistors.

Keywords

This publication has 3 references indexed in Scilit:

Application of the floating-gate technique to the study of the n-MOSFET gate current evolution due to hot-carrier aging
IEEE Electron Device Letters, 1990
Lateral distribution of hot-carrier-induced interface traps in MOSFETs
IEEE Transactions on Electron Devices, 1988
Charge pumping in MOS devices
IEEE Transactions on Electron Devices, 1969