Experimental verification of bistable switching with Gunn diodes
- 20 May 1971
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 7 (10) , 246-247
- https://doi.org/10.1049/el:19710167
Abstract
It has been demonstrated experimentally that high-quality Gunn diodes exhibit switching between two stable states. One of them is the ohmic state below threshold. The other one is a low-current high-voltage state and is associated with a stationary high-field layer at the anode.Keywords
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