Impurity-enhanced disordering in the pseudobinary semiconductor alloy ${Al}_{x}$ ${Ga}_{1 - x}$ As

15 May 1986

journal article
research article
Published by American Physical Society (APS) in Physical Review B

Vol. 33 (10) , 7281-7284
https://doi.org/10.1103/physrevb.33.7281

Abstract

We measured Raman spectra from Zn-doped

{Al}_{0.32}

{Ga}_{0.68}

As. The disorder-activated Raman modes were enhanced by the Zn doping. The Zn-doping enhances the structural disorder with violation of the translation symmetry and the inversion symmetry.

Keywords

This publication has 19 references indexed in Scilit:

Clustering Parameter and Internal Stress in III-V Ternary Alloys
Japanese Journal of Applied Physics, 1985
Bond relaxation phenomenon and impurity modes frequencies in III–V compounds
Solid State Communications, 1985
Long-Range Order in ${Al}_{x} {Ga}_{1 - x} As$
Physical Review Letters, 1985
Selectivity of resonant Raman scattering in $In {As}_{x} P_{1 - x}$ solid solutions
Physical Review B, 1984
Effects of Chemical and Structural Disorder in Semiconducting Pseudobinary Alloys
Physical Review Letters, 1984
Extended x-ray-absorption fine-structure study of ${Ga}_{1 - x} {In}_{x} As$ random solid solutions
Physical Review B, 1983
Structural Origin of Optical Bowing in Semiconductor Alloys
Physical Review Letters, 1983
Atomic-Scale Structure of Random Solid Solutions: Extended X-Ray-Absorption Fine-Structure Study of ${Ga}_{1 - x} {In}_{x} As$
Physical Review Letters, 1982
Raman investigation of anharmonicity and disorder-induced effects in ${Ga}_{1 - x} {Al}_{x} As$ epitaxial layers
Physical Review B, 1981
Raman scattering spectra in mixed ${Ga}_{1 - x} {Al}_{x} As (Sb)$ crystals
Physical Review B, 1981

Impurity-enhanced disordering in the pseudobinary semiconductor alloyAlxGa1−xAs

Abstract

Keywords

Impurity-enhanced disordering in the pseudobinary semiconductor alloy ${Al}_{x}$ ${Ga}_{1 - x}$ As