HEMT 60 GHz amplifier
- 24 October 1985
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 21 (22) , 1028-1029
- https://doi.org/10.1049/el:19850729
Abstract
A high electron mobility transistor (HEMT) amplifier has been fabricated which exhibits 7.5 dB gain at 61 GHz. This result was obtained with a quarter-micrometre gate-length depletion-mode HEMT. Reduction of source-gate resistance and gate length are primarily responsible for this performance. The letter describes the materials and device processing technology developed for fabricating these devices.Keywords
This publication has 2 references indexed in Scilit:
- A 60 GHz GaAs FET AmplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Low Noise High Electron Mobility TransistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984