Profile studies of hydrogen trapping in metals due to ion damage

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Abstract
The retention of hydrogen isotopes in Mo at room temperature after ion implantation damage has been studied by measurements of H depth profiles and total D retained in the near‐surface region. Implantations of He, O, Ne, and Bi in a fluence range 3×1014–2×1017/cm2 were followed by 8‐keV hydrogen bombardment to fluences of 2×1015–2×1017/cm2. Large enhancements in the amount of hydrogen retained in preimplanted samples over samples without prior implantation have been observed and are interpreted in terms of damage trapping. For a given predamage ion fluence hydrogen retention increases linearly with hydrogen fluence until a saturation level is reached. Increased predamage fluence results in increased saturation level for hydrogen trapping, with average concentrations as high as ∼10 at.% achieved. An ion‐mass dependence indicates that the lighter ions, which create fewer primary displacements, are more effective in hydrogen trapping, suggesting a dependence on the damage density in the ion cascades.

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