Characterization of an N-channel 1T-1C nonvolatile memory cell using ferroelectric SrBi2Ta2O9 as the capacitor dielectric
- 1 November 1995
- journal article
- research article
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 11 (1-4) , 145-160
- https://doi.org/10.1080/10584589508013587
Abstract
This work investigates the feasibility of a 1T-1C memory cell consisting of an n-channel transistor and ferroelectric SrBi2Ta2O9 as the capacitor dielectric. 1T-1C ferroelectric memory cells processed through interconnect metalization are discussed. Advantages and disadvantages of two different process sequences are examined. Data indicates that n-channel transistor damage is highly dependent on the process sequence, and that a SrBi2Ta2O9 1T-1C memory cell is fully functional through interconnect metalization.Keywords
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