Passivation of ohmic contacts to GaAs
- 1 November 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 6 (11) , 586-588
- https://doi.org/10.1109/edl.1985.26239
Abstract
A film of silicon dioxide was used to passivate Au-Ge-Ni metallization during the alloying cycle. Ohmic contacts prepared in this way had smooth surfaces, better edge definition, and more uniform electrical characteristics. Also the time-temperature alloying cycle for fabricating suitable contacts was significantly broadened. These improvements are most likely due to the prevention of arsenic loss during the alloying procedure.Keywords
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