Dependence on the In concentration of the piezoelectric field in (111)B InGaAs/GaAs strained heterostructures
- 17 October 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (16) , 2042-2044
- https://doi.org/10.1063/1.112787
Abstract
No abstract availableKeywords
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