Optimal surface and growth front of III–V semiconductors in molecular beam epitaxy: A study of kinetic processes via reflection high energy electron diffraction specular beam intensity measurements on GaAs(100)
- 1 July 1986
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 4 (4) , 890-895
- https://doi.org/10.1116/1.583533