Irradiation-enhanced solid krypton formation in Kr-implanted aluminum

The effect of further irradiation on 1×${10}^{15}$ or 6×${10}^{15}$ Kr/${\mathrm{cm}}^2$ implanted aluminum has been investigated by a channeling method with a 1 MeV ${\mathrm{He}}^{+}$ beam at room temperature. The post-implantation irradiation by the analysis beam enhanced the formation of epitaxial solid krypton precipitates. This result indicates that interstitial introduced during implantation play an important role in the formation of solid krypton for Kr implantation with high doses.