Electronic and optical properties of room temperature sputter deposited indium tin oxide

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Abstract
The purpose of this article is to demonstrate a simple technique for magnetron sputter deposition of thin ITO films at room temperature without postdeposition annealing. Using a gas mixture of 0.7% O2 balanced with Ar and 50 W rf power, thin films with resistivity as low as 8.2×10−4 Ω cm have been fabricated. The sputter deposited films have optical transmittance of over 80% in the visible range. The absorption edge located in the mid‐infrared (4000–400 cm−1) has been observed to shift toward increasing wave number (decreasing wavelength) with increasing resistivity of the thin ITO films. At 0.7% O2 concentration it has been found that the resistivity is insensitive to the total pressure of the sputtering chamber over the range of 1.4–8.0 mTorr.

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