Anomalous strong repulsive step-step interaction on slightly misoriented Si(113)
- 15 March 1997
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 55 (12) , 7864-7867
- https://doi.org/10.1103/physrevb.55.7864
Abstract
We have used scanning tunneling microscopy to study Si(113) 0.2° misoriented towards [11-bar0]. Rapid quenching of this surface from 1500–1575 K to room temperature results in a uniformly stepped single-domain surface, whereas slower cooling gives rise to clustering of steps. The thermally induced step wandering and the terrace width distribution of the uniformly stepped surface are analyzed in order to determine the strength of the energetic and entropic step-step interactions. Beside the short-range attractive step-step interaction found by Song and Mochrie [Phys. Rev. Lett. 73, 995 (1994)] on Si(113) misoriented 1°–5° towards [001], we found an anomalously strong long-range repulsive step-step interaction on Si(113) 0.2° misoriented towards [11-bar0]. The coexistence of a long-range repulsive and a short-range attractive step-step interaction may explain the transition from a uniformly stepped surface at high freeze in temperature to a faceted surface at lower freeze in temperatures.Keywords
This publication has 21 references indexed in Scilit:
- Reconstructions on the Si(113) surfacePhysical Review B, 1996
- Atomic Structure of Clean Si(113) Surfaces: Theory and ExperimentPhysical Review Letters, 1994
- Equilibrium shape of SiPhysical Review Letters, 1993
- Chemisorption of H, H2O and C2H4 on Si(113): implications for the structureSurface Science, 1993
- On the structure of Si(113)Surface Science, 1993
- Structure and electronic properties of the Si(113) surfaceSurface Science, 1991
- Structure of Si(113) determined by scanning tunneling microscopyPhysical Review Letters, 1991
- Disordering of the (3×1) reconstruction on Si(113) and the chiral three-state Potts modelPhysical Review Letters, 1990
- On the electronic and geometric structure of the Si(113) surfaceSurface Science, 1989
- Vapor growth of InGaAs and InP on (100), (110), (111), (311) and (511) InP substratesJournal of Crystal Growth, 1982