Comment on misfit dislocations in abrupt Hg1−xCdxTe heterojunctions
- 1 January 1984
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 2 (1) , 77-79
- https://doi.org/10.1116/1.572632
Abstract
The misfit dislocations and dangling bond densities of abrupt (111) Hg1−xCdxTe heterojunctions have been calculated based on a mathematical model for epitaxial crystal growth. For unstrained heterojunctions with alloy composition difference Δx≥0.10, the minimum density of dangling bonds is ≥1011 cm−2. Such large dangling bond densities may produce high interface recombination velocities or band bending at the interface.Keywords
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