A Test of Two Solute-Trapping Models

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Abstract
Two solute trapping models are compared. They are shown to predict identical behavior at any given end of a phase diagram but different behavior as the phase diagram is traversed. The segregation behavior of dilute solutions of Ge in Si (ke < 1) and of Si in Ge (ke > 1) during regrowth from pulsed-laser melting is being studied using transient conductance, high resolution RBS, and SIMS. Our results to date suggest a significant amount" of solute trapping (k —> 1) of Ge in Si and of Si in Ge. Such a result would be inconsistent with the predictions of one of the models.