Vapor phase epitaxy dynamics
- 1 May 1985
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 71 (3) , 699-704
- https://doi.org/10.1016/0022-0248(85)90379-3
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Deposition of GaAs Epitaxial Layers by Organometallic CVD: Temperature and Orientation DependenceJournal of the Electrochemical Society, 1983
- On the Reaction Mechanism of GaAs MOCVDJournal of the Electrochemical Society, 1983
- Deposition of III–V compounds by MO-CVD and in halogen transport systems — A critical comparisonJournal of Crystal Growth, 1981
- A study of the growth mechanism of epitaxial GaAs as grown by the technique of metal organic vapour phase epitaxyJournal of Crystal Growth, 1981
- 7. Bericht über Untersuchungen zur ausgebildeten TurbulenzZAMM - Journal of Applied Mathematics and Mechanics / Zeitschrift für Angewandte Mathematik und Mechanik, 1925