Characteristics And Applications Of Semiconductor Photodiodes From The Visible To The X-Ray Region
- 1 January 1986
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 0733, 481-486
- https://doi.org/10.1117/12.964949
Abstract
The quantum efficiencies of a Si pnn+ and a GaAsP Schottky photodiode have been measured in the photon energy range from 5 to 1000 eV. The efficiency is generally much higher than that of photoemissive detectors. The performance of the Si diode is affected by soft X-ray exposure, but for the Schottky diode a stable quantum efficiency is observed over the entire spectral range making this device attractive for many applications.Keywords
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