Sulfur Hexafluoride as an Etchant for Silicon

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Abstract
Sulfur hexafluoride gas in hydrogen ambient is used to in‐situ etch silicon wafers producing very smooth surfaces. The subsequently grown epitaxial silicon layers are of high quality (stacking fault density ≤4 per cm2), and the impurity profiles as measured by the spreading resistance technique are indicative of layers not doped with sulfur. The entire process of etching and epitaxial growth are carried out at temperatures (≤1100°C) sufficiently low so that no dislocations are generated due to high thermal stresses. Some of the basic limitations introduced by such a highly reactive etchant are discussed.

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