Carrier lifetime of semi-insulating GaAs in the region of magnetoconcentration
- 1 September 1975
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (9) , 4106-4107
- https://doi.org/10.1063/1.322127
Abstract
The effect of a magnetic field on the photoconductivity of semi‐insulating GaAs crystals mounted in the Voigt geometry has been investigated at room temperature. In the present experiment, the magnetic field deflects the photocarriers towards the illuminated surface of the specimen where their concentration increases. For weak electric fields an increase of the photoconductivity is obtained, whereas high electric fields produce a reduction of the photoconductivity. From the experimental results the carrier lifetime was determined as a function of the thickness of the magnetoconcentration region.This publication has 6 references indexed in Scilit:
- Behavior of magnetophotoconductivity of semi-insulating GaAs upon α-particle bombardmentJournal of Applied Physics, 1973
- Magnetophotoconductivity of semi-insulating GaAs and its behavior upon electron bombardmentJournal of Applied Physics, 1972
- Investigation of the Recombination and Trapping Processes of Photoinjected Carriers in Semi-Insulating Cr-Doped GaAs Using PME and PC MethodsJournal of Applied Physics, 1972
- Photoconductivity of semi-insulating gallium arsenide in the presence of a magnetic fieldCanadian Journal of Physics, 1969
- Optical Energy Gap in TlSePhysica Status Solidi (b), 1968
- Photocurrent Amplification by a Magnetic FieldPhysica Status Solidi (b), 1968