Characterization of highly doped n- and p-type 6H-SiC piezoresistors
- 1 April 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 45 (4) , 785-790
- https://doi.org/10.1109/16.662776
Abstract
No abstract availableKeywords
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