Dielectric Properties of Pb(Mg1/3Nb2/3)Ti(Ni1/2W1/2)O3 Ceramic

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Abstract
Dielectric properties of Pb(Mg1/3Nb2/3)O3–PbTiO3–Pb(Ni1/2W1/2)O3 pseudo-ternary ceramics were studied. The ceramics could be sintered at 1050°C, exhibited high dielectric constant (15000∼20000) and high resistivity (1013Ω·cm, 27000 Ω·F). A small addition of MnO2 to these ceramics decreased the dissipation factor and caused a peculiar temperature dependence of dielectric constnt. The characteristics of multilayer chip capacitors made of these ceramics with Ag–Pd electrode are described.

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