The DSI diode—A fast large-area optoelectronic detector
- 1 June 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 32 (6) , 1034-1036
- https://doi.org/10.1109/t-ed.1985.22069
Abstract
Fast double-Schottky-interdigitated diodes have been fabricated by evaporating Al-Schottky contacts on lowly doped n-GaAs (n=10 14 cm -3 ), These detectors have a relatively large light-sensitive area of 400 µm 2 . Rise and fall times are in the order of 10 ps. The external quantum efficiency is 25 percent at λ = 820 nm. The frequency response of the diodes is essentially flat up to 18 GHz, which is the limit of the measuring equipment.Keywords
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