Diffusion lengths of excited carriers in CdxZn1−xSe quantum wells

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Abstract
Diffusion lengths of excited carriers in a Cd x Zn 1−x Se multiple quantum well structure were determined for temperatures between room temperature and 8 K from cathodoluminescencemeasurements. The diffusion length was found to depend upon temperature and Cd concentration of the quantum well. For the highest Cd concentration (x=0.43), the diffusion length increased with temperature up to 225 K and then dropped at higher temperatures. Diffusion lengths were 0.21 μm at 8 K, 0.38 μm at 225 K, and 0.24 μm at room temperature. For the well with least Cd concentration (x=0.24), longer diffusion lengths were obtained. The nature of the diffusing carriers is also discussed.