AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon (111) substrates
- 31 October 2002
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 46 (10) , 1535-1539
- https://doi.org/10.1016/s0038-1101(02)00101-6
Abstract
No abstract availableKeywords
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- Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructuresJournal of Applied Physics, 1999
- GaN microwave electronicsIEEE Transactions on Microwave Theory and Techniques, 1998