AlGaAsSb/InGaAsSb/GaSb quantum well lasers with separate confinement heterostructures for 2-um operation

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Abstract
Calculation of the optical field distribution in 2 micrometer AlGaAsSb/InGaAsSb/GaSb multiple quantum well (MQW) lasers shows that incorporation of about 100 nm waveguide layers between quantum wells (QW) and cladding layers increases the optical confinement factor and reduces losses caused by mode penetration into doped cladding layers. Structures of this type have been grown by MBE. Both photoluminescence studies and measurements of laser diode parameters demonstrate that excess carriers confined in the waveguide are effectively collected and recombine in the QWs despite the small valence band offset at the interface of the QW and the waveguide, which is expected to be less than kT at 300 K.

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