Effects of crystal orientation on the state density at the interface between anodically grown silicon dioxide and silicon

This publication has 3 references indexed in Scilit:

• The electrical properties of anodically grown silicon dioxide films
  Solid-State Electronics, 1973
• Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurements
  Surface Science, 1971
• Surface states at steam-grown silicon-silicon dioxide interfaces
  IEEE Transactions on Electron Devices, 1966