Magnetic-field-dependent excitonic photoluminescence linewidth inIn0.48Ga0.52P semiconductor alloys

We report the observation of a magnetic-field-dependent excitonic photoluminescence linewidth in ${\mathrm{In}}_{0.48}$ ${\mathrm{Ga}}_{0.52}$P semiconductor alloys (lattice matched to GaAs). The measurements were made at 1.4 K and the magnetic field ranged between 0 and 13.6 T. The photoluminescence peak energies ranged between 1.976 and 1.995 eV while the full width at half maximum linewidths varied from 4.3 to 6.0 meV. The linewidth variation is compared with several calculations which take into account the potential fluctuations caused by the disorder of the alloy components.