Deep-level defects in red GaAs_1-xP_xlight-emitting diodes

• 1 January 1974
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
• Vol. 62  (4) , 534-535
• https://doi.org/10.1109/proc.1974.9468

Abstract

Keywords

• CAPACITANCE
• LIGHT EMITTING DIODES
• GALLIUM ARSENIDE
• LIGHT EMITTING DIODE
• LATTICES
• ZINC
• PHOTONIC BAND GAP
• ENERGY STATES